Indium-antimony complex crystal semiconductor and process for pr

Details Indium-antimony complex crystal semiconductor and process for pr Indium-antimony complex crystal semiconductor and process for pr

1984-06-14

1985-09-03

Rosenberg, Peter D.

Alloys or metallic compositions

Gallium, indium, or thallium base

148400, 148442, 420576, 420580, 428600, B05D 512

Patent

active

045391785

ABSTRACT:
An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.

REFERENCES:
patent: 3101280 (1963-08-01), Harrison
patent: 3634143 (1972-01-01), Brennan
patent: 3850685 (1974-11-01), Sakai
patent: 4213781 (1980-07-01), Noreika

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