Indium antimonide (InSb) photodetector device and structure for

Details Indium antimonide (InSb) photodetector device and structure for Indium antimonide (InSb) photodetector device and structure for

1994-06-02

1997-07-08

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257441, 257631, H01L 2714

Patent

active

056464371

ABSTRACT:
The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react with InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.

REFERENCES:
patent: Re32928 (1989-05-01), Jacob
patent: 3567946 (1971-03-01), Paul
patent: 3983395 (1976-09-01), Kim
patent: 4286277 (1981-08-01), Longshore
patent: 4371587 (1983-02-01), Peters
patent: 5086328 (1992-02-01), Kasai et al.
patent: 5130259 (1992-07-01), Bahraman
patent: 5262633 (1993-11-01), Kasai et al.

Affiliated with

Also associated with

Rating

Indium antimonide (InSb) photodetector device and structure for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Indium antimonide (InSb) photodetector device and structure for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Indium antimonide (InSb) photodetector device and structure for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2410175