Coherent light generators – Particular active media – Semiconductor
Patent
1994-11-28
1998-11-03
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 50, H01S 318
Patent
active
058320199
ABSTRACT:
An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal.
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Bour David P.
Paoli Thomas L.
Thornton Robert L.
Treat David W.
Bovernick Rodney B.
Song Yisun
Xerox Corporation
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