Index-guided laser on grooved (001) substrate

Details Index-guided laser on grooved (001) substrate Index-guided laser on grooved (001) substrate

1994-06-28

1995-03-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 14, 372 45, H01S 319

Patent

active

054003563

ABSTRACT:
An index-guided semiconductor laser having a grooved waveguide which uses the optical confinement resulting from the bandgap difference between two phases of OMVPE formed AlGaInP, and in which the higher bandgap phase occurs with AlGaInP grown on substrates orientated at angles less than 55 degrees with respect to the (001) plane. The device is fabricated on a (100) orientated substrate having an etched groove. By fabricating the sidewalls with an angle of between 5 degrees and 50 degrees with respect to the (100) plane of the substrate, composition differences between the (100) stripe center and the grooved sidewall are minimized.

REFERENCES:
patent: 4932033 (1990-06-01), Miyazwa et al.
patent: 5010556 (1991-04-01), Imanaka et al.
patent: 5115443 (1992-05-01), Miyazawa
Bona, G. L.; Unger,P.; Buchan, N. I.; Heuberger, W.; Jakubowicz, A.,; Roentgen, P. (Al)GaLnP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates. IEEE Photonics Technology Letters, vol. 5, No. 10, Oct. 1993, pp. 1125-1128.
Furuya, A.; Kito, Y.; Fukushima, T.; Sugano, M.; Sudo, H.; Anayama, C.; Kondo, M.; Tanahashi, T. Self-Aligned Bend Waveguide (SBW) AlGaLnP Visible Laser Diode with Small Beam Astigmatism. IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1869-1873.

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