Index-guided laser on a ridged (001) substrate

Details Index-guided laser on a ridged (001) substrate Index-guided laser on a ridged (001) substrate

1994-06-28

1995-11-07

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

054652669

ABSTRACT:
Index-guided semiconductor lasers having buried ridge waveguides which use the optical confinement resulting from the bandgap difference between a semiconductor material grown on the top plane of the ridge and a semiconductor material grown on the ridge's sidewalls. Beneficially AlGaInP is OMVPE formed on a ridged (001) GaAs substrate in which a sidewall of the ridge is at an angle of between 5 degrees and the {111} A plane of the substrate.

REFERENCES:
Bona, G. L.; Unger, P.; Buchan, N. I.; Heuberger, W.; Jakubowicz, A.; Roentgen, P. (Al)GalnP Laser with Lateral Confinement by Epitaxial Growth on Nonplanar Substrates. IEEE Photonics Technology Letters, vol. 5, No. 10, Oct. 1993, pp. 1125-1128.
Furuya, A.; Kito, Y.; Fukushima, T.; Sugano, M.; Sudo, H.; Anayama, C.; Kondo M.; Tanahashi, T. Self-Aligned Bend Waveguide (SBW) AlGalnP Visible Laser Diode with Small Beam Astigmatism. IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, pp. 1869-1873.

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