Index-guided laser array with select current paths defined by mi

Details Index-guided laser array with select current paths defined by mi Index-guided laser array with select current paths defined by mi

Filed on

1992-10-23

Date issued

1994-05-10

Examiner

Lee, John D.

Patent Class

Coherent light generators

SubClass

Particular active media

SubSubClass

Semiconductor

Other Related Categories

372 45, H01S 319

Type

Patent

Status

active

Patent number

053115333

Description

ABSTRACT:
A method is provided for producing a novel index-guided laser or laser array by MOCVD in a single growth step. A ridge or a number of ridges are first fabricated by dry or wet etching on a GaAs wafer; and n-and p-type epitaxial layers including cladding layers and an active layer are then grown on the entire wafer surface, forming the laser structure. One or more current blocking layers are incorporated into an upper cladding layer which is grown after the active layer. Due to migration-enhanced dopant incorporation and dopant diffusion during the growth, the current blocking layer is rendered ineffective in the vicinity of the ridges, thus forming a laterally restricted current path for carrier injection. The laser is index-guided on the ridges. This laser structure is extremely simple to produce since it requires no further photolithographic masking steps after growth, only metallization.

REFERENCES:
patent: 4653057 (1987-03-01), van Oirschot
patent: 4682337 (1987-07-01), Amann
patent: 4727557 (1988-02-01), Burnham et al.
patent: 4791651 (1988-12-01), Taneya et al.
patent: 4803691 (1989-02-01), Scifres et al.
patent: 4819243 (1989-04-01), Opschoor
patent: 4897846 (1990-01-01), Yoshida et al.
patent: 4903274 (1990-02-01), Taneya et al.
patent: 4932033 (1990-06-01), Miyazawa et al.
patent: 5048038 (1991-09-01), Brennan et al.
patent: 5065200 (1991-11-01), Bhat et al.
patent: 5065404 (1991-11-01), Okajima et al.
patent: 5070509 (1991-12-01), Meyers
patent: 5138625 (1992-08-01), Paoli et al.
"High-Power Fundamental Mode AlGaAs Quantum Well . . . Molecular Beam Epitaxy", by Jaeckel et al., Appl. Phys. Lett., 55, 1059 (1989, Sep.).
"Orientation-Dependent Doping in Organometallic Chemical Vapor Deposition . . . Lateral p-n Junction Arrays", by R. Bhat et al., Appl. Phys. Lett., 56, 1691 (1990, Apr.).
"Very Dense 102-Laser . . . Threshold Current", by S. Hirata et al., Appl. Phys. Lett., 58, 319, 1991 (Jan.).
"Orientation Dependence of . . . Grown on Non-Planar Substrates", by R. Bhat et al., Journal of Crystal Growth, 107, 772-778 (1991).
"A Submilliampere-Threshold Multiquantum . . . Using Single-Step MOCVD", by Narui et al., IEEE J. Quantum Electronics, 28, 4-8 (1992).

Affiliated with

Also associated with

Rating

Index-guided laser array with select current paths defined by mi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Index-guided laser array with select current paths defined by mi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Index-guided laser array with select current paths defined by mi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2417145