Independently controlled, double gate nanowire memory cell...

Details Independently controlled, double gate nanowire memory cell... Independently controlled, double gate nanowire memory cell...

2009-02-11

2010-12-28

Graybill, David E (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S319000, C257S331000, C257S366000

Reexamination Certificate

active

07859028

ABSTRACT:
A double gate, dynamic storage device and method of fabrication are disclosed. A back (bias gate) surrounds three sides of a semiconductor body with a front gate disposed on the remaining surface. Two different gate insulators and gate materials may be used.

REFERENCES:
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patent: 7339232 (2008-03-01), Seo et al.
patent: 7545001 (2009-06-01), Cheng et al.
patent: 2002/0022325 (2002-02-01), Gardner et al.
patent: 2003/0112659 (2003-06-01), Ohsawa
patent: 2005/0093064 (2005-05-01), Ohsawa

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