Independently addressable semiconductor laser arrays with buried

Details Independently addressable semiconductor laser arrays with buried Independently addressable semiconductor laser arrays with buried

1997-09-26

1999-06-29

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

059178477

ABSTRACT:
The present invention provides a independently addressable, high density, edge emitting laser array structure formed by a lateral wet oxidation process. The aperture of the laser structure is formed by selective layer intermixing and lateral wet oxidation from adjacent grooves etched in the laser structure.

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Cheng et al., "Lasing Characteristics of High-Performance Narrow-Stripe InGaAs-GaAs Quantum Well Lasers Confined by AlAs Native Oxide", IEEE Photonics Technology Letters, vol. 8, No. 2, Feb. 1996, pp. 176-178.
Carraci et al., "High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers", Appl. Phys. Lett., vol. 61 (3), Jul. 20, 1992, pp. 321-323.

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