Increasing thermal conductivity of thermal interface using...

Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices

Reexamination Certificate

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C165S080200, C165S185000, C174S016300, C361S707000, C361S708000, C361S718000, C361S719000, C361S722000, C428S216000, C428S408000

Reexamination Certificate

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06891724

ABSTRACT:
The invention relates to a structure of and a process of forming an integrated circuit package that utilizes a thermal interface material layer having an aligned array of carbon nanotubes affixed to a surface of the layer. The thermal interface material is diamond deposited by chemical vapor deposition. The carbon nanotubes are formed by a plasma discharge process on the surface of the CVDD and also may be formed on the surface of the die.

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US 2003/0117770 Montgomery et al “Carbon Nanotube Thermal Interface Structures”, Jun. 2003.*
“High Conduction Thermal Interface Material”,IBM Technical Disclosure Bulletin, 36 (10), IBM Corp., NY, US, (1993), 581-583.

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