Increasing stress-enhanced drive current in a MOS transistor

Details Increasing stress-enhanced drive current in a MOS transistor Increasing stress-enhanced drive current in a MOS transistor

2005-03-22

2005-03-22

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Ballistic transport device

C257S018000

Reexamination Certificate

active

06870179

ABSTRACT:
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.

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