Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-11-21
2008-12-30
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE31029
Reexamination Certificate
active
07470922
ABSTRACT:
A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material.
REFERENCES:
patent: 6566700 (2003-05-01), Xu
patent: 2003/0189200 (2003-10-01), Lee et al.
Besana Paola
Galbiati Amos
Marangon Tina
Le Thao P.
Ovonyx Inc.
Trop Pruner & Hu P.C.
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