Increased well depth hact using a strained layer superlattice

Details Increased well depth hact using a strained layer superlattice Increased well depth hact using a strained layer superlattice

1992-07-24

1994-02-01

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 22, 257254, 257416, 359285, 359305, H01L 29161, H01L 29205

Patent

active

052834441

ABSTRACT:
A heterojunction acoustic charge transport device (HACT) having a charge transport channel 39 which is sandwiched between upper and lower charge confinement layers, 14,20, has the charge transport channel 39 made of a Strained Layer Superlattice (SLS) comprising alternating deep-well semiconductor layers 40, that provide a deep quantum well depth, and strain relief layers 42 that provide strain relief to prevent dislocations from occurring due to lattice mismatches between the InGaAs layers within the channel 39 and the charge confinement layers 14,20, thereby allowing the overall thickness of the channel 39 to be at least as wide as conventional HACT devices that use a GaAs channel. The strain relief layers 42 may be narrowly sized to allow tunneling of electrons across the entire channel 39 thereby allowing the charge to move as a single group, or alternatively, widely sized to provide separate isolated channels thereby allowing the charge to move in separate groups. Both embodiments provide increased quantum well depth in the channel 39 over conventional HACT devices.

REFERENCES:
patent: 4893161 (1990-01-01), Tanski et al.
patent: 5155738 (1992-10-01), Ijichi et al.
patent: 5166766 (1992-11-01), Grudkowski et al.
T. G. Andersson et al., "Variation of the Critical Layer Thickness with in Content in Strained In.sub.x Ga.sub.1-x As-GaAs Quantum Wells by Molecular Beam Expitaxy" Appl Physics Letters, vol. 51, No. 10 (Sep. 7, 1987), pp. 752-754.
G. C. Osbourn et al., "Principal and Applications of Semiconductor Strained Layer Superlattices" in R. Dingle; Semiconductors and Semimetals (New York, Academic Press, 1987) vol. 24, Ch. 8, pp. 459-503.
H. C. Esaki, "Compositional Superlatices" in: E. H. C. Parker, The Technology and Physics of Molecular Beam Epitaxy (New York, Plenum Press, Ch 6, pp. 143-184, 1985.

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