Increased voltage MOS semiconductor device

Details Increased voltage MOS semiconductor device Increased voltage MOS semiconductor device

1991-09-10

1992-11-10

Laroche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257336, 257339, 257409, H01L 2968

Patent

active

051628830

ABSTRACT:
The present invention relates to an increased operating voltage MOS semiconductor device. The device has a channel forming area between a source and extended drain area, a gate insulating film over the channel forming area and the drain area with a thicker portion over the drain area, and a gate electrode over the gate insulating film, thereby preventing an excess field concentration from existing in the extended drain region. The field concentration may be further reduced by forming a relaxation area underneath the juncture between the thick and thin portions of the gate insulating film below the surface of the drain area.

REFERENCES:
patent: 4929991 (1990-05-01), Blanchard
patent: 4933730 (1990-06-01), Shirato
patent: 4943844 (1990-07-01), Oscilowski

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