Increased stand-off height integrated circuit assemblies,...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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Details

C438S613000, C438S612000, C257S780000, C257S778000, C257S779000, C257S738000, C257SE23021, C257SE23023

Reexamination Certificate

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11109258

ABSTRACT:
Disclosed are integrated circuit assemblies with increased stand-off height and methods and systems for their manufacture. Methods of the invention provide for assembling a semiconductor device by aligning a die with a substrate and interposing solder between corresponding substrate and die bond pads. A lifting force is applied to the die during heating of the solder to a liquescent state, thereby increasing the stand-off height of the die above the substrate. The lifting force is maintained during cooling of the solder to a solid state, thereby forming increased stand-off height solder connections.

REFERENCES:
patent: 6081997 (2000-07-01), Chia et al.
patent: 6131795 (2000-10-01), Sato
patent: 6220503 (2001-04-01), Cox et al.
patent: 6324069 (2001-11-01), Weber
patent: 6451625 (2002-09-01), Pu et al.
patent: 6643434 (2003-11-01), Cayrefourcq et al.
patent: 6965552 (2005-11-01), Tokuda et al.
patent: 2004/0232561 (2004-11-01), Odegard

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