Increased responsivity photodetector

Details Increased responsivity photodetector Increased responsivity photodetector

2006-12-12

2006-12-12

Allen, Stephone B. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C257S288000

Reexamination Certificate

active

07148463

ABSTRACT:
A photodetector includes a high-indium-concentration (H-I-C) absorption layer having a Group III sublattice indium concentration greater than 53%. The H-I-C absorption layer improves responsivity without decreasing bandwidth. The photoconversion structure that includes the H-I-C absorption layer can be formed on any type of substrate through the use of a metamorphic buffer layer to provide a lattice constant gradient between the photoconversion structure and the substrate. The responsivity of the photodetector can be further improved by passing an incoming optical signal through the H-I-C absorption layer at least twice.

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