Increased intensity laser diode source configuration

Details Increased intensity laser diode source configuration Increased intensity laser diode source configuration

1990-12-21

1992-02-04

Scott, Jr., Leon

Coherent light generators

Particular active media

Semiconductor

372 36, 385 15, H01S 319

Patent

active

050864319

ABSTRACT:
A semiconductor laser chip having one or more lasing junctions is mounted on one side of a thin sheet of thermally conductive material opposite to a second semiconductor laser chip of the same construction mounted on the opposite side. The thin sheet of material allows the emitting facets of the semiconductor laser chips to be placed in close proximity for coupling into the end of an optical fiber or other use. Made of hardened copper or other suitable material, the thin sheet of material serves as a heat conducting path between the semiconductor laser chips and a heat sink. Different configurations may utilize different shapes for the thin sheet of material; the thin sheet may have parallel opposing sides or opposing sides that are at an angle with respect to one another.

REFERENCES:
patent: 3803511 (1974-04-01), Thompson
patent: 4993801 (1991-02-01), Sarraf
patent: 4995050 (1991-02-01), Waarts et al.

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