Increased capacitance memory cell capacitor

Details Increased capacitance memory cell capacitor Increased capacitance memory cell capacitor

1992-09-08

1994-08-23

Lateef, Marvin M.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361313, 29 2542, 437919, H01G 406

Patent

active

053412729

ABSTRACT:
A method for forming a storage capacitor (12) including the step of forming a storage node contact window (38) and forming a cavity (48) in the storage electrode (50) such that the capacitive area includes the sidewalls of the storage electrode and the cavity in the storage electrode. The capacitor is completed by forming a dielectric layer (54) over the storage electrode (50) and forming a conductive layer (56) over the dielectric layer (54) to act as a plate electrode capacitively-coupled to the storage electrode (50) through the dielectric layer (54). Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4009424 (1977-02-01), Itoh
patent: 4700457 (1987-10-01), Matsukawa
patent: 4742018 (1988-05-01), Kimura et al.
patent: 5185284 (1993-02-01), Motonami
patent: 5244824 (1993-09-01), Sivan
"3-Dimensional Stacked Capacitor for 16M and 64M DRAMS", Ema et al., International Electron Devices Meeting, Dec., 1988, pp. 592-595.
"Novel High Density, Stacked Capacitor MOS RAM", Koyanagi et al., International Election Devices Meeting, Dec., 1978, pp. 348-351.

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