Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Five or more layer unidirectional structure
Reexamination Certificate
2005-05-03
2005-05-03
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Five or more layer unidirectional structure
C257S110000, C257S142000, C257S350000
Reexamination Certificate
active
06888177
ABSTRACT:
A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, the junction area between a base region and an adjacent emitter region of a thyristor is increased, relative to the junction area between other regions in the thyristor. In one implementation, the base region is formed extending on two sides of the emitter region. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure, with the base region having a first portion laterally adjacent to the emitter region and having a second portion between the emitter region and the buried insulator.
REFERENCES:
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5279977 (1994-01-01), Kida et al.
patent: 5528058 (1996-06-01), Pike et al.
patent: 5719411 (1998-02-01), Ajit
patent: 5981983 (1999-11-01), Funaki et al.
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6128216 (2000-10-01), Noble, Jr. et al.
patent: 6225165 (2001-05-01), Noble, Jr. et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6552398 (2003-04-01), Hsu et al.
patent: 6713794 (2004-03-01), Suzuki
Kim, Dong Myong. Electrical Characteristics of Npn-AIGaAs/GaAs HBTs with Modulated Base Doping Structures.Journal of the Korean Physical Society,vol. 33, No. 5, Nov. 1998. Pp 607-611.
Horch Andrew
Nemati Farid
Robins Scott
Nelms David
Nguyen Dao H.
T-RAM, Inc.
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