Increased base-emitter capacitance

Details Increased base-emitter capacitance Increased base-emitter capacitance

2005-05-03

2005-05-03

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Five or more layer unidirectional structure

C257S110000, C257S142000, C257S350000

Reexamination Certificate

active

06888177

ABSTRACT:
A thyristor-based semiconductor device exhibits a relatively increased base-emitter capacitance. According to an example embodiment of the present invention, the junction area between a base region and an adjacent emitter region of a thyristor is increased, relative to the junction area between other regions in the thyristor. In one implementation, the base region is formed extending on two sides of the emitter region. In another implementation, the thyristor is formed on a buried insulator layer of a silicon-on-insulator (SOI) structure, with the base region having a first portion laterally adjacent to the emitter region and having a second portion between the emitter region and the buried insulator.

REFERENCES:
patent: 5124772 (1992-06-01), Hideshima et al.
patent: 5279977 (1994-01-01), Kida et al.
patent: 5528058 (1996-06-01), Pike et al.
patent: 5719411 (1998-02-01), Ajit
patent: 5981983 (1999-11-01), Funaki et al.
patent: 6104045 (2000-08-01), Forbes et al.
patent: 6128216 (2000-10-01), Noble, Jr. et al.
patent: 6225165 (2001-05-01), Noble, Jr. et al.
patent: 6229161 (2001-05-01), Nemati et al.
patent: 6552398 (2003-04-01), Hsu et al.
patent: 6713794 (2004-03-01), Suzuki
Kim, Dong Myong. Electrical Characteristics of Npn-AIGaAs/GaAs HBTs with Modulated Base Doping Structures.Journal of the Korean Physical Society,vol. 33, No. 5, Nov. 1998. Pp 607-611.

Affiliated with

Also associated with

Rating

Increased base-emitter capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Increased base-emitter capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Increased base-emitter capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3452333