Incorporation of dielectric layer onto SThM tips for direct...

Radiant energy – Ionic separation or analysis

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S306000, C250S307000, C250S311000

Reexamination Certificate

active

06566650

ABSTRACT:

FIELD OF THE INVENTION
The invention relates to the general field of atomic force microscopy with particular reference to performing scanning thermal microscopy on specimens that are conducting electricity.
BACKGROUND OF THE INVENTION
Scanning Thermal Microscopy (SThM) is a technique that uses the specimen's thermal conductivity as a contrast mechanism in imaging microscopic features. The temperature sensing probe in Atomic Force Microscopy (AFM) can be used for semiconductor material and device study such as locating hot spots created by short circuit defects in the sub micron regime.
Commercial SThMs use a miniature thermal resistor positioned at the end of a cantilever. If a small current is passed through the resistor, and the resistance is measured as the tip is scanned over the surface, a local temperature map of the specimen is produced based on the resistance changes. If, on the other hand, a large current is passed and the resistor temperature rises significantly above that of the specimen, the probe detects local changes in the local thermal conductivity of the sample. In the latter mode of operation, the thermal conductivity of the specimen, as presented at the surface, is an aggregate of any thermal conductivity variations down into the specimen. Changes in composition below the specimen surface will therefore produce a feature in the thermal map.
One of the limitations to current usage of the above probe is that if one needs to obtain the thermal map of an electrically biased specimen, the conductive parts of the specimen must be passivated to prevent excessive current leakage between the tip and the conductive sample. This is illustrated in
FIG. 1
where microtip
12
, coated with sensing layer
13
, is seen to be located near the end of cantilever beam
11
. If a current is being passed through
13
and/or through specimen layer
15
, leakage, shown schematically as arrows
14
, will occur between probe and specimen. The prior art solution to this has been to coat the specimen with a layer of insulation. In many cases, however, this may be difficult and/or undesirable to do.
Additionally, commercial resistive probes are often prone to short circuiting between the conductors should any conductive contaminants end up between the conductive leads that connect to the tips. This is illustrated in
FIG. 2
where cantilever beam
11
is seen extending out from one end of insulating substrate
21
. After fabrication of the sensing tip (as in
FIG.1
, for example), the substrate was coated with a conductive material which was then formed into connecting leads
22
and
23
by laser machining trench
24
through the metal down to the substrate level. Since said trench is only about 25 microns wide, a particle of conductive material, such as
25
, can, if it bridges trench
24
, short circuit the leads
22
and
23
.
The present invention enables SThM to be performed directly on electrically biased conductive samples. In addition, it minimizes the probability of its electrical conductors being shorted to each other by conductive contaminants.
A routine search of the prior art was performed and the following references of interest were found: Luo et al. in J. Vac. Sci. Technol. B 15(2) 349-359 discuss manufacturing techniques, some of which were used when the first embodiment of the present invention was first reduced to practice. U.S. Pat. No. 5,969,238 (Fischer) shows a thermoelectric probe tip process. U.S. Pat. No. 5,581,083 (Majumdar et al.) shows a sensor and tip for a scanning thermal microscopy, and U.S. Pat. No 5,811,802 (Gamble) shows a scanning microscope. Pylekki et al. (U.S. Pat. No. 5,441,343) show a thermal sensing scanning probe microscope using resistive sensors while Aslam et al. (U.S. Pat. No 5,488,350) show diamond film structures in different patterns for conducting, generating, and/or absorbing thermal energy.
SUMMARY OF THE INVENTION
It has been an object of the present invention to provide a scanning thermal microscope probe that may be used to scan a specimen through which an electric current is passing.
Another object of the invention has been that said probe be of the thermocouple type.
A further object of the invention has been that said probe be of the resistance thermometer type.
A still further object has been to provide processes for manufacturing of said novel probe types.
These objects have been achieved by coating the tips of both the above probe types with a layer of insulation that is also a good thermal conductor. This allows the probes to be used to scan specimens in which an electric current is passing without the presence of a leakage current between probe and specimen.


REFERENCES:
patent: 3893058 (1975-07-01), Keith
patent: 4177375 (1979-12-01), Meixner
patent: 4332081 (1982-06-01), Francis
patent: 5441343 (1995-08-01), Pylkki et al.
patent: 5488350 (1996-01-01), Aslam et al.
patent: 5581083 (1996-12-01), Majumdar et al.
patent: 5811802 (1998-09-01), Gamble
patent: 5929438 (1999-07-01), Suzuki et al.
patent: 5969238 (1999-10-01), Fischer
patent: 6038101 (2000-03-01), Yoda et al.
patent: 6106148 (2000-08-01), Moslehi et al.
patent: 6250801 (2001-06-01), Bernard
patent: 63115042 (1988-05-01), None
patent: 05198148 (1993-08-01), None
patent: 872469 (1981-10-01), None
K. Lou et al., “Sensor nanofabrication, performance, and conduction mechanisms in scanning thermal microscopy”, J. Vac. Sci. Technol. B 15(2), Mar./Apr. 1997, pp. 339-360.*
K. Luo et al., “Sensor Nanofabrication, Performance, and Conduction Mechanisms in Scanning Thermal Microscopy”, J. Vac. Sci. Technol. B 15(2), Mar./Apr. 1997, pp. 349-360.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Incorporation of dielectric layer onto SThM tips for direct... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Incorporation of dielectric layer onto SThM tips for direct..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Incorporation of dielectric layer onto SThM tips for direct... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3008161

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.