Metal treatment – Compositions – Heat treating
Patent
1984-07-12
1986-03-18
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 148187, 148DIG4, 148DIG84, 357 61, 427 531, H01L 21263
Patent
active
045766525
ABSTRACT:
Ion implanted gallium arsenide substrates are annealed by providing an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.
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"Proximate Capless Annealing of GaAs Using a Controlled-Excess As Vapor Pressure Source", J. M. Woodall, et al., Appl. Phys. Lett., vol. 38, No. 8, Apr. 15, 1981, pp. 639-641.
Hovel Harold J.
Kuech Thomas F.
International Business Machines - Corporation
Roy Upendra
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