Incandescent light energy conversion with reduced infrared emiss

Details Incandescent light energy conversion with reduced infrared emiss Incandescent light energy conversion with reduced infrared emiss

1995-06-06

1998-09-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 77, 257 80, 257102, 313315, 313501, 313499, H01L 3300

Patent

active

058148400

ABSTRACT:
Energy conversion among heat or electricity and incandescent light is achieved, in the case of incandescent light emission, with the emission having reduced IR content, using a high band gap semiconductor element that is tailored in structure and in energy conversion physics to suppress free carrier absorption so as to be transparent or reflecting of photon energy that is below the band gap of the semiconductor and to only emit photon energy above the band gap of the semiconductor. A filament of lightly "N" doped 3C-SiC, at about 900 degrees C., will incandesce and radiate in the visible range for energies greater than about 2 eV and will exhibit inefficient emission of photons for energies less than about 2 eV.

REFERENCES:
patent: 223898 (1880-01-01), Edison
patent: 3502930 (1970-03-01), Fok
patent: 3517281 (1970-06-01), Mlavsky
patent: 3634149 (1972-01-01), Knippenberg
patent: 5243204 (1993-09-01), Suzuki et al.
Hochberg et al., "A Thin-Film Integrated Incandescent Display", IEEE Transactions on Electron Devices, vol. ED-20, No. 11, Nov. 1973 pp. 1002-1005.
Knippenberg, W.F., "Growth Phenomena in Silicon Carbide" Phillips Research Reports, 1963, pp. 161-274.

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