InAs hole-immobilized doping superlattice long-wave-infrared det

Details InAs hole-immobilized doping superlattice long-wave-infrared det InAs hole-immobilized doping superlattice long-wave-infrared det

1991-02-07

1992-07-21

Jackson, Jr., Jerome

357 4, 357 16, H01L 29205, H01L 3110

Patent

active

051327635

ABSTRACT:
A new approach to long-wave-infrared (LWIR) technology is based on molecular beam epitaxy (MBE) growth of holeimmobilized doping superlattices (12) in narrow band gap III-V semiconductors, specifically, InAs and InSb. Such superlattices are incorporated into detector structures (10, 10', 10") suitable for focal plane arrays. The objective of this approach is an LWIR detector possessing the advantages of high detectivity performance, to wavelengths of at least about 16 .mu.m, at operating temperatures of 65K, where long-duration space refrigeration is plausible.

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