InAs/GaSb superlattice structure infrared detector fabricated by

Details InAs/GaSb superlattice structure infrared detector fabricated by InAs/GaSb superlattice structure infrared detector fabricated by

1997-09-23

1999-12-21

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 22, H01L 2906

Patent

active

060052597

ABSTRACT:
The invention concerns an InAs/GaSb superlattice infrared detector that is prepared on a GaSb or a GaAs substrate by low pressure organometaleic chemical vapor deposition. The thickness of well and barrier modulated in the superlattice is used to control the wavelength of absorption. As the superlattice is sandwiched by the Si-doped InAs layer, the wavelength of absorption is in the 8.about.14 .mu.m range. As the superlattice is sandwiched by the Zn-doped GaSb layer, the wavelength of absorption is in the 3.about.5 .mu.m range.

REFERENCES:
1. Chen et al., "Normal Incidence Intersubband Optical Transition in GaSb / InAs Superlattices," Appl. Phys. Lett. 61(5), pp. 509-511, Aug. 1992.
2. Chen et al., "Normal Incidence Intersubband and Interband Optical Transition in GaSb / InAs Superlattices," PTL, vol. 7, No. 10, 1995.
3. Chen et al., "Doping Effects on Intersubband and Interband Optical Transition in GaSb / InAs Superlattices," IEEE QE, vol. 32, No. 2, 1996.

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