Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-01-20
2008-03-11
Evans, Jefferson (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07342753
ABSTRACT:
A magnetoresistive read element with improved biasing of the free layer is disclosed. The read element includes a free layer, a spacer layer, a first pinned bias layer, an APC layer, and a second pinned bias layer antiparallel exchange coupled with the first pinned bias layer. The second pinned bias layer has a width greater than the width of the first pinned bias layer, while the volumes of the first and second pinned bias layers are substantially similar. The width of the first pinned bias layer allows magnetic fields from the first pinned bias layer to longitudinally bias the free layer. The width of the second pinned bias layer avoids magnetic fields of the second pinned bias layer from biasing the free layer.
REFERENCES:
patent: 6473279 (2002-10-01), Smith et al.
patent: 6704175 (2004-03-01), Li et al.
patent: 6741432 (2004-05-01), Pinarbasi
patent: 6958892 (2005-10-01), Gill
patent: 6988308 (2006-01-01), Bergevin et al.
patent: 7072154 (2006-07-01), Gill et al.
patent: 7106561 (2006-09-01), Carey et al.
patent: 7161771 (2007-01-01), Lin et al.
patent: 7180716 (2007-02-01), Li et al.
patent: 7280325 (2007-10-01), Pan
patent: 2003/0179513 (2003-09-01), Pinarbasi
patent: 2003/0235016 (2003-12-01), Gill
patent: 2004/0086751 (2004-05-01), Hasegawa et al.
patent: 2004/0109264 (2004-06-01), Gill
patent: 2005/0219773 (2005-10-01), Li et al.
patent: 2005/0264950 (2005-12-01), Gill
patent: 2005/0280957 (2005-12-01), Gill
patent: 2006/0044706 (2006-03-01), Gill
patent: 2006/0044708 (2006-03-01), Gill
patent: 2006/0067016 (2006-03-01), Childress et al.
patent: 2007/0064350 (2007-03-01), Gill
Duft Bornsen & Fishman LLP
Evans Jefferson
Hitachi Global Storage Technologies - Netherlands B.V.
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