In-solid nuclear spin quantum calculation device

Details In-solid nuclear spin quantum calculation device In-solid nuclear spin quantum calculation device

2007-11-06

2007-11-06

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S014000, C257S024000, C257SE27005, C257SE33063, C257SE21034, C257S410000, C257S411000, C712S032000, C505S170000, C324S225000

Reexamination Certificate

active

10497244

ABSTRACT:
A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is selected to bring about inversion of electron spins based on a non-equilibrium distribution of electrons in a quantum Hall edge state and to initialize the polarization of nuclear spins. An oscillatory electric field of a nuclear magnetic resonance frequency is applied to coplanar waveguides (104A) and (104B) to control the nuclear spin polarization. The controlled spin polarization is read out by measuring the Hall resistance from ohmic electrodes (102VA) and (102VB). An in-solid nuclear spin quantum processor device can be manufactured by attaching a microfine metal gate structure to a quantized Hall effect element that is realized in a semiconductor two-dimensional system, and allows a limited number of nuclear spins to be controlled, initialized, subjected to a unitary transformation, and read out.

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