In-situ wafer temperature control apparatus for single wafer too

Details In-situ wafer temperature control apparatus for single wafer too In-situ wafer temperature control apparatus for single wafer too

1995-08-25

1997-09-16

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

438 5, H01L 2100

Patent

active

056676220

ABSTRACT:
A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.

REFERENCES:
patent: 4493939 (1985-01-01), Blaske et al.
patent: 5179333 (1993-01-01), Washizuka et al.
patent: 5270266 (1993-12-01), Hirano et al.
patent: 5374888 (1994-12-01), Karasawa

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