In-situ temperature measurement using X-ray diffraction

Details In-situ temperature measurement using X-ray diffraction In-situ temperature measurement using X-ray diffraction

1995-10-24

1997-06-03

Church, Craig E.

X-ray or gamma ray systems or devices

Specific application

Diffraction, reflection, or scattering analysis

378 71, G01N 23207

Patent

active

056362587

ABSTRACT:
A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.

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