In-situ technique for cleaving crystals

Details In-situ technique for cleaving crystals In-situ technique for cleaving crystals

1996-10-30

1998-06-30

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Substrate dicing

438462, 225 2, H01L 21304

Patent

active

057733180

ABSTRACT:
The specification describes techniques for cleaving crystal bodies, e.g. semiconductor laser bars, using thermostatic cleaving tools. Use of such tools allows the cleaving process to occur in an ultra high vacuum chamber without the use of mechanical devices activated from the exterior of the chamber. Cleaving occurs automatically and controllably by locally heating the cleaving tools, thereby deflecting the thermostatic element against the laser bar and causing fracture.

REFERENCES:
patent: 5171717 (1992-12-01), Broom et al.
patent: 5310104 (1994-05-01), Zaidel et al.
patent: 5629233 (1997-05-01), Chand et al.
patent: 5665637 (1997-09-01), Chand
patent: 5668049 (1997-09-01), Chakrabarti et al.
M. Ohta et al., J. Vac. Sci. technol. B 12(3)(1994)1705 "Ultrahigh vacuum atomic force microscope with sample cleaving mechanism", May 1994.

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