Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Reexamination Certificate
2005-01-11
2005-01-11
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
C117S046000, C117S047000, C117S925000, C117S926000, C117S927000
Reexamination Certificate
active
06840999
ABSTRACT:
Amorphous or polycrystalline films have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone melting technique, in which an electrically heated wire generated a narrow heated or molten zone (0.5-2 mm wide) on the substrate sandwiched between two pieces of glass or indium-tin-oxide-coated glass. The substrate can be either an organic or inorganic compound. When the molten zone was moved slowly (3-120 μm/min) across the layer from one end of the cell to the other, a single-crystal film was produced after a single pass. This technique allows for thin film purification and an improvement in electronic, optical, and optoelectronic properties of the thin film. After this treatment, the steady-state short-circuit photocurrent can be improved by several orders of magnitude. These films are useful in the fields of optics and electronics for improving the performance in devices such as thin-film transistors and organic light-emitting diodes.
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Bard Allen J.
Liu Chongyang
Board of Regents , The University of Texas System
Fulbright & Jaworski L.L.P.
Kunemund Robert
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