In-situ photoresist removal by an attachable chamber with...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With means for passing discrete workpiece through plural...

Reexamination Certificate

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Details

C438S689000, C156S345370, C134S001200, C134S001300, C134S084000

Reexamination Certificate

active

06929713

ABSTRACT:
A method of fabricating integrated circuit wafers, in accordance with this invention comprises the following steps. Provide an integrated circuit wafer having devices formed therein covered with a metal layer and a photoresist layer over the metal layer which is selectively exposed and developed forming a photoresist mask. Introduce the wafer into a multi-chamber system, patterning the metal layer by etching and then exposing the mask to light in a cooled chamber wherein the light is derived from a source selected from a mercury lamp and a laser filtered to remove red and infrared light therefrom before exposure of the wafer thereto. The chamber is cooled by a refrigerant selected from water and liquefied gas Then remove the wafer, and load it into a photoresist stripping tank to remove the photoresist mask with a wet photoresist stripper. Place the wafer in a batch type plasma chamber after removing the photoresist mask. Establish a plasma discharge in the batch type plasma chamber for a first time while flowing oxygen gas through the batch type plasma chamber. Terminate the plasma discharge, and then remove the wafer from the batch type plasma chamber.

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patent: 5503964 (1996-04-01), Nishina et al.
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patent: 5840203 (1998-11-01), Peng
patent: 6103055 (2000-08-01), Maher et al.
patent: 6325861 (2001-12-01), Stinnett

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