In-situ monitoring, and growth of thin films by means of selecte

Details In-situ monitoring, and growth of thin films by means of selecte In-situ monitoring, and growth of thin films by means of selecte

1992-02-14

1994-03-22

Beck, Shrive

Coating processes

Measuring, testing, or indicating

4272481, 427252, 427255, C23C 1600

Patent

active

052962555

ABSTRACT:
A method for selectively forming thin films by CVD in which at least two substrates are exposed to a decomposable gas, and one of the subsrates is independently heated to selectively form a film on the heated substrate. The invention further comprises a step of measuring an electrical property of the film during deposition.

REFERENCES:
patent: 4348886 (1982-09-01), Faith, Jr.
patent: 4652463 (1987-03-01), Peters
patent: 4923717 (1990-05-01), Gladfeter et al.
patent: 4953387 (1990-09-01), Johnson et al.
IEEE Electron Device Letters, vol. 14, No. 3, Mar. 1993, 3 pages.

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