In situ method of preparing modified titanium dioxide photoactiv

Details In situ method of preparing modified titanium dioxide photoactiv In situ method of preparing modified titanium dioxide photoactiv

1978-06-22

1980-01-01

Esposito, Michael F.

Coating processes

Electrical product produced

Photoelectric

427126, 427376C, 427377, 429111, C25B 1104, C25B 1110

Patent

active

041817540

ABSTRACT:
A method of preparing doped or modified polycrystalline p- or n-type titanium dioxide semiconductor electrodes utilizable in photoassisted oxidation reactions or photoelectrochemical cells is provided. The method comprises the steps of (1) applying to a titanium substrate a thin film of one or more oxide of metals selected from the group consisting of aluminum and the d-electron transition metals other than titanium, and (2) heating the coated titanium body in an oxygen-containing atmosphere at an elevated temperature, preferably below about 800.degree. C., to sinter the coating to the titanium substrate. The sintering step produces on the titanium substrate a thin photoactive film of titanium dioxide containing a uniform concentration gradient of the previously-applied modifying oxide.

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