In situ method of forming a bypass capacitor element internally

Metal working – Electric condenser making – Solid dielectric type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29830, 29840, H01G 440

Patent

active

058005757

ABSTRACT:
An in situ method for forming a bypass capacitor element internally within a PCB comprising the steps of arranging one or more uncured dielectric sheets with conductive foils on opposite sides thereof and laminating the conductive foils to the dielectric sheet simultaneously as the PCB is formed by a final lamination step, the conductive foils preferably being laminated to another layer of the PCB prior to their arrangement adjacent the dielectric sheet or sheets, the dielectric foils even more preferably being initially laminated to additional dielectric sheets in order to form multiple bypass capacitive elements as a compound subassembly within the PCB. A number of different dielectric materials and resins are disclosed for forming the capacitor element. A dielectric component in the capacitor element preferably includes dielectric material and thermally responsive material, the thermally responsive material either forming a carrier for the dielectric material or formed as two separate sheets on opposite sides of a sheet of the dielectric material.

REFERENCES:
patent: 3034930 (1962-05-01), Foudriat, Jr.
patent: 3142047 (1964-07-01), Henderson
patent: 3348990 (1967-10-01), Zimmerman et al.
patent: 3436819 (1969-04-01), Lunine
patent: 3469019 (1969-09-01), Reimann
patent: 3506482 (1970-04-01), Hirohata et al.
patent: 3742597 (1973-07-01), Davis
patent: 3932932 (1976-01-01), Goodman
patent: 4187339 (1980-02-01), Cayrol
patent: 4211603 (1980-07-01), Reed
patent: 4301192 (1981-11-01), Plichta et al.
patent: 4372046 (1983-02-01), Suzuki
patent: 4388136 (1983-06-01), Huie et al.
patent: 4389278 (1983-06-01), Kai
patent: 4417393 (1983-11-01), Becker
patent: 4486738 (1984-12-01), Sadlo et al.
patent: 4522888 (1985-06-01), Eichelberger et al.
patent: 4543715 (1985-10-01), Iadarola et al.
patent: 4554229 (1985-11-01), Small, Jr.
patent: 4554732 (1985-11-01), Sadlo et al.
patent: 4584627 (1986-04-01), Schilling et al.
patent: 4605915 (1986-08-01), Marshall et al.
patent: 4616292 (1986-10-01), Sengoku et al.
patent: 4633035 (1986-12-01), McMonagle
patent: 4635358 (1987-01-01), Fritz
patent: 4636018 (1987-01-01), Stillie
patent: 4642569 (1987-02-01), Hayes et al.
patent: 4675717 (1987-06-01), Herrero et al.
patent: 4739257 (1988-04-01), Jenson et al.
patent: 4748537 (1988-05-01), Hernandez et al.
patent: 4775573 (1988-10-01), Turek
patent: 4812355 (1989-03-01), Yokoyama et al.
patent: 4908258 (1990-03-01), Hernandez
patent: 4996097 (1991-02-01), Fischer
patent: 5010641 (1991-04-01), Sisler
patent: 5079069 (1992-01-01), Howard et al.
patent: 5162977 (1992-11-01), Paurus et al.
patent: 5261153 (1993-11-01), Lucas
Int. Appln. No. PCT/US90/04777 published 7 Mar. 1991 as Int. Publn. No. WO 91/02647.
Int. PCT Search Report for Int. Appln. No. PCT/US90/04777.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

In situ method of forming a bypass capacitor element internally does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In situ method of forming a bypass capacitor element internally , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ method of forming a bypass capacitor element internally will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-265646

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.