In-situ method for preparing and highlighting of defects for fai

Details In-situ method for preparing and highlighting of defects for fai In-situ method for preparing and highlighting of defects for fai

1999-03-26

2000-12-19

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 60, 216 66, 216 79, 438 8, 438 14, 438719, 438738, H01L 2100

Patent

active

061627356

ABSTRACT:
In accordance with the present invention, a method for inspecting a semiconductor sample for failures includes the steps of determining a target area for observation on the semiconductor sample, preparing a region in proximity to the target area to provide access to the target area, and mounting the semiconductor sample into a chamber. The chamber provides a capability for removing material in proximity of the target area, and provides a capability for observing the semiconductor sample in-situ. The semiconductor sample is maintained in the chamber while performing the following steps: etching a first material selective to a second material such that the target area has the first material removed therefrom to expose the second material such that the second material is preserved for observation, and monitoring the progress of the etching step to determine a time to discontinue the etching.

REFERENCES:
patent: 4734158 (1988-03-01), Gillis
patent: 5395769 (1995-03-01), Arienzo et al.
patent: 5399229 (1995-03-01), Stefani et al.
patent: 6071829 (2000-06-01), Starck et al.
"XL830/860 DualBeam Workstation Users Guide", PN 42326, FEI Company, pp. 4-32 to 4-40, 1998.

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