In situ method for CMP endpoint detection

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438692, 451 21, H01L 21461

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058343776

ABSTRACT:
Several quantities related to pad wear during chemical mechanical polishing have been improved by measuring the emissivity of the pad within the annulus of wear. This emissivity value is shown to relate directly to the amount of wear in the pad and is used to control the pressure on a conditioner that is employed to compensate for pad wear. By using multiple conditioners, each of which presses on the pad with a force that is related to the pad emissivity in its annulus of wear, the uniformity of material removal, both in time and space, is improved.

REFERENCES:
patent: 5439551 (1995-08-01), Meikle et al.
patent: 5483568 (1996-01-01), Yano et al.
patent: 5597442 (1997-01-01), Chen et al.
patent: 5643050 (1997-07-01), Chen
patent: 5647952 (1997-07-01), Chen

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