In-situ measurement method and apparatus for semiconductor proce

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324763, 3241581, G01R 3100

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active

061408336

ABSTRACT:
A measurement device for in-situ measurement of processing parameters, in accordance with the present invention, includes a semiconductor wafer having at least one processed chip formed thereon. The processed chip further includes at least one sensor for measuring process parameters. A memory storage device for storing the process parameters as the process parameters are measured by the at least one sensor is also included. A timing device is provided for tracking the process parameters as a function of time, and a power supply is included for providing power to the at least one sensor, the memory storage device and the timing device. Also, a method is described for making measurements with the measurement device.

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"A New Technique for Solving Wafer Charging Problems", Shideler et al., Semiconductor International, Jul. 1995, pp. 153-158.

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