Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-10-30
2007-10-30
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S483000, C257SE21090, C257SE21108, C257SE21109
Reexamination Certificate
active
11326433
ABSTRACT:
A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first layer can then be removed using a wet chemical etch to form a mask. After removing the patterned photoresist a second layer can be epitaxially grown in a metal organic chemical vapor deposition (MOCVD) chamber or a chemical beam epitaxy (CBE) chamber on a portion of the first layer exposed by the mask. The mask can then be removed the mask in the MOCVD/MBE chamber. The disclosed in-situ mask removal method minimizes both the atmospheric exposure of a growth surface and the number of sample transfers.
REFERENCES:
patent: 6111277 (2000-08-01), Ikeda
patent: 6654396 (2003-11-01), Hoshi et al.
patent: 7176115 (2007-02-01), Kitaoka et al.
Birudavolu et al.,“In-Situ Mask Removal in Selective Area Epitaxy Using Metal Organic Chemical Vapor Deposition,”Journal of Crystal Growth 277 (2005) 97-103.
Berger et al.,“Monolithic Integration of GaAs and In0.2Ga0.8As Lasers By Moleculat Beam Epitaxy on GaAs,”Appl. Phys. Lett. 58 (23), Jun. 10, 1991, pp. 2698-2700.
Zhang et al.,“Selective Area Epitaxy of GaAs Using Tri-Isopropylgallium,”Journal of Electronic Materials, vol. 27, No. 5, 1998, p. 446.
Birudavolu et al.,“Selective Area Growth of InAs Quantum Dots Formed on a Patterned GaAs Substrate,”Applied Physics Letters, vol. 85, No. 12, Sep. 20, 2004, pp. 2337-2339.
Berger et al.,“GaAs Quantum Well Laser and Heterojunction Bipolar Transistor Integration Using Molecular Beam Epitaxial Regrowth,”Appl. Phys. Lett. 59 (22), Nov. 25, 1991, pp. 2826-2828.
Birodavolu Sandy
Huffaker Diana L.
Dang Trung
MH2 Technology Law Group, LLP.
STC.UNM
LandOfFree
In-situ mask removal in selective area epitaxy using metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with In-situ mask removal in selective area epitaxy using metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In-situ mask removal in selective area epitaxy using metal... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3852682