In situ hot bake treatment that prevents precipitate formation a

Details In situ hot bake treatment that prevents precipitate formation a In situ hot bake treatment that prevents precipitate formation a

1995-04-04

1996-09-10

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437228, 437247, H01L 2128

Patent

active

055545637

ABSTRACT:
A process for preventing the formation of precipitates on a substrate surface containing titanium after a contact layer (e.g., tungsten layer) etch back. The process involves removing the precursor chemicals of the precipitate. With the invention, the precursor are removed by baking the substrate at a temperature of approximately 120.degree. C. for approximately 80 seconds. Preferably, the baking process is performed in situ by a halogen lamp mounted on the exit loading dock of the etcher thereby not impacting the wafer throughput of the etcher.

REFERENCES:
patent: 4561907 (1985-12-01), Raicu
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5164330 (1992-11-01), Davis et al.
patent: 5174816 (1992-12-01), Aoyama
patent: 5227337 (1993-07-01), Kadomura
patent: 5254498 (1993-10-01), Sumi
patent: 5326723 (1994-07-01), Petro et al.
patent: 5347696 (1994-09-01), Willer et al.
patent: 5391244 (1995-02-01), Kadomura

Affiliated with

Also associated with

Rating

In situ hot bake treatment that prevents precipitate formation a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with In situ hot bake treatment that prevents precipitate formation a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ hot bake treatment that prevents precipitate formation a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1320215