In-situ exchange biased GMR head for ultra-high density...

Details In-situ exchange biased GMR head for ultra-high density... In-situ exchange biased GMR head for ultra-high density...

2006-02-14

2006-02-14

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating article containing magnetically...

C216S022000, C216S066000, C029S603140, C360S112000

Reexamination Certificate

active

06998061

ABSTRACT:
A process for manufacturing a GMR read element of a read/write head for a disk drive having pattern exchange biasing for longitudinal stabilization. An in situ or ex situ GMR anneal of the pinned layer occurs after only the AFM pinning layer and the first pinned layer have been deposited. After the anneal, the upper surface of the first pinned layer is milled with low energy ions to remove oxidation and SIMS inspection determines the amount of oxidation removed and the amount of surface modification required for smoothing. After this, the remaining layers are deposited through the exchange bias layer. A second anneal is then performed at a somewhat lower temperature than the GMR anneal. In this manner, the entire stack is not subjected to the GMR anneal, the upper surface of the first pinned layer can be optimized, and the interface between the free layer and the exchange biased layer is not disturbed.

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