Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1997-11-26
1999-06-22
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118715, 118724, C23C 1600
Patent
active
059140011
ABSTRACT:
In one embodiment, a method of forming a barrier layer for contacting a metal interconnect layer to one or more exposed N and P type silicon regions on a wafer. The wafer is heated with a direct radiation source, such as a lamp. To equalize the differing emissivities of the N type and P type silicon regions, an opaque layer of refractory metal is first formed on the regions at a temperature below approximately 100.degree. C. A refractory metal deposition process is then conducted at temperatures between 230.degree. C.-425.degree. C. During this higher temperature deposition process, the reducing gas is ramped up with time to increase the deposition rate of the refractory metal as the exothermic reducing reactions increasingly heat the contact areas. Other process and apparatus features enable higher bonding strength between the silicon surface and the formed barrier layer contacting the silicon surface and enable a higher purity content of the processing gases as well as improved diffusion of processing gases when injected into the processing chamber.
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Werner Kern, "Chemical Vapor Deposition Systems For Glass Passivation of Integrated Circuits," Dec. 1975, Solid State Technology, The Electronics Manufacturer's Journal, vol. 18/No. 12, pp. 25-33.
Dang Thi
LSI Logic Corporation
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