In-situ endpoint detection method and apparatus for chemical-mec

Details In-situ endpoint detection method and apparatus for chemical-mec In-situ endpoint detection method and apparatus for chemical-mec

1993-06-14

1994-08-09

Wieder, Kenneth A.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324688, 156627, 437 8, G01R 2726

Patent

active

053370155

ABSTRACT:
An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.

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