In-situ electron beam induced current detection

Details In-situ electron beam induced current detection In-situ electron beam induced current detection

2005-05-24

2005-05-24

Zarneke, David (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S750010, C324S1540PB, C356S365000, C250S310000, C250S311000

Reexamination Certificate

active

06897665

ABSTRACT:
A method and in-situ sample current amplification system for carrying out failure analysis of integrated circuit semiconductor device conductive portions. The method includes providing an integrated circuit (IC) semiconductor device; providing a pre-amplifier board (PAB) comprising current signal amplification electronics; mounting the IC semiconductor device in electrical communication with the PAB; mounting the PAB comprising the IC semiconductor device in a scanning electron microscope (SEM) for probing the IC semiconductor device with a primary electron beam; exposing at least a portion of the IC semiconductor device to the primary electron beam to induce a current signal within the conductive portions; amplifying the current signal; and, outputting the amplified current signal to an image display system to produce an image representative of an electrical resistance of the conductive portions.

REFERENCES:
patent: 4980639 (1990-12-01), Yoshizawa et al.
patent: 5523694 (1996-06-01), Cole, Jr.
patent: 5952837 (1999-09-01), Koyama
patent: 6583634 (2003-06-01), Nozoe et al.
patent: 20020070738 (2002-06-01), Yamada et al.

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