In-situ doping of MBE grown II-VI compounds on a homo- or hetero

Details In-situ doping of MBE grown II-VI compounds on a homo- or hetero In-situ doping of MBE grown II-VI compounds on a homo- or hetero

1986-09-12

1988-04-05

Roy, Upendra

Fishing, trapping, and vermin destroying

437 28, 437105, 437126, 437987, H01L 21265, H01L 21363

Patent

active

047359102

ABSTRACT:
The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.

REFERENCES:
patent: 3520741 (1970-07-01), Mankarious
patent: 4086108 (1978-04-01), Gonda
patent: 4392453 (1983-07-01), Luscher
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4589192 (1986-05-01), Dinan et al.
Yao et al., Appl. Phys. Lett., 48 (1986), 160.
Mach et al., Phys. Stat. Solidi (2a) [1970], 701.
Engel et al., in Ion Implantation in Semiconductors, ed. Chernow et al., Plenum, 1976, p. 663.
Shepherd et al., J. Vac. Sci. Technol. 18 (1981), 899.

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