In-situ doped silicon using tertiary butyl phosphine

Details In-situ doped silicon using tertiary butyl phosphine In-situ doped silicon using tertiary butyl phosphine

1989-10-14

1992-03-17

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG40, 148DIG122, 437959, 437967, 437971, H01L 21469

Patent

active

050968564

ABSTRACT:
The disclosure relates to a method of forming in situ phosphorous doped polysilicon wherein a surface upon which phosphorous doped polysilicon is to be deposited is placed in a vacuum furnace and, after low pressure HCl cleaning of the surface and furnace, a predetermined ratio of silane and a gaseous phosphorous containing compound taken from the class consisting of phosphorous trichloride, tertiary butyl phosphine, isobutyl phosphine, trimethyl phosphate and tetramethyl phosphate are simultaneously passed through the furnace at predetermined pressure and temperature to provide a uniformly phosphorous doped layer of polysilicon on the surface.

REFERENCES:
patent: 4217375 (1980-08-01), Adams
patent: 4229502 (1980-10-01), Wu et al.
patent: 4357179 (1982-11-01), Adams et al.
patent: 4460416 (1984-07-01), Wonosowicz
patent: 4485128 (1984-11-01), Dala et al.
patent: 4708884 (1987-11-01), Chandross et al.
patent: 4721683 (1988-01-01), Ward
Wolf et al., Silicon Processing For the VLSI Era, Lattice Press, Sunset Beach, California, 1986, pp. 179-180.
Roenigk et al., "Analysis of Multicomponent LPCVD Processes", J. Electrochem. Soc., vol. 132, No. 2 (Feb. 1985), pp. 448-534.
Ghandi, "VLSI Fabrication Principles," (Wiley & Sons, New York, NY 1983), pp. 432-435, 217-219, 517-520.
Sze, S. M., VLSI Technology, McGraw-Hill Book Company, Bell Laboratories, Inc. pp. 102-103.

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