In situ doped polysilicon using tertiary butyl phosphine

Details In situ doped polysilicon using tertiary butyl phosphine In situ doped polysilicon using tertiary butyl phosphine

1988-03-01

1989-10-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG40, 148DIG22, 437233, 437959, 437967, 437971, H01L 21469

Patent

active

048777536

ABSTRACT:
The disclosure relates to a method of forming in situ phosphorous doped polysilicon wherein a surface upon which phosphorous doped polysilicon is to be deposited is placed in a vacuum furnace and, after low pressure HCl cleaning of the surface and furnace, a predetermined ratio of silane and a gaseous phosphorous containing compound taken from the class consisting of phosphorous trichloride, tertiary butyl phosphine, isobutyl phosphine, trimethyl phosphate and tetramethyl phosphate are simultaneously passed through the furnace at predetermined pressure and temperature to provide a uniformly phosphorous doped layer of polysilicon on the surface.

REFERENCES:
patent: 4708884 (1987-11-01), Chandross et al.
patent: 4721683 (1988-01-01), Ward

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