Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters
Reexamination Certificate
2006-07-18
2006-07-18
Deb, Anjan (Department: 2858)
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Lumped type parameters
C324S071500, C438S017000, C438S018000
Reexamination Certificate
active
07078919
ABSTRACT:
The present invention provides techniques for an in-situ measurement of resistivity profiles and dopant concentration distributions in semiconductor structures, such as shallow junctions. A substrate with a resistor test structure having a conduction circuit may be placed at a measurement station, surface layers may be successively removed from the conduction circuit at the measurement station, a sheet resistance of the conduction circuit may be measured at the measurement station after the removal of each surface layer to generate a plurality of sheet resistance measurements, and the resistivity profile may be calculated from the plurality of sheet resistance measurements.
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Deb Anjan
Fish & Richardson P.C.
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