In-situ CVD chamber cleaner

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118 501, 118620, 134 1, 134 221, 134166R, 156643, 156646, 204298, B44C 122, C03C 1500, C03C 2506

Patent

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046576169

ABSTRACT:
An apparatus for the in-situ cleaning of Low Pressure Chemical Vapor Deposition tube chambers (32) or Reduced Pressure Epitaxy bell jar chambers (42) having a base member (22) to create a vacuum seal upon engagement with the loading end of the chamber, at least one powered electrode (62) which protrudes from the base member into the chamber, at least on grounded electrode (60) which also protrudes from the base member into the chamber, a means for introducing gas (92) into the chamber, and an electrical network (16) that creates a radio frequency electrical field between the powered electrode and the grounded electrode. A plasma is created in the chamber by the interaction of the gas and the RF field, and the plasma etches unwanted deposits from the inner wall of the chamber. Several different configurations of electrode structures are shown.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4123663 (1978-10-01), Horiike
patent: 4138306 (1979-02-01), Niwa
patent: 4265730 (1981-05-01), Hirose
patent: 4461237 (1984-07-01), Hinkel
patent: 4500563 (1985-02-01), Ellenberger
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 4576698 (1986-03-01), Gallagher
D. Flamm and V. Donnelly, "The Design of Plasma Etchants", Plasma Chem. Plasma Process, B. pp. 317-363, (1981).
D. E. Ibbotson, J. A. Mucha, D. L. Flamm and J. M. Cook, "Plasmaless Dry Etching of Silicon with Fluorine-Containing Compounds", J. Appl. Phys, 56(10), 2939-2942, (1984).

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