Radiant energy – Electron energy analysis
Patent
1991-01-18
1992-09-15
Anderson, Bruce C.
Radiant energy
Electron energy analysis
250306, 250307, H01J 4700, H01J 3700
Patent
active
051480255
ABSTRACT:
The composition of material being grown by vapor deposition may be analyzed in situ by applying a beam of electrons, from a source such as a RHEED gun, incident at a low angle to the material being grown. The energy levels in the reflected beam may be analyzed by spectroscopy to qualitatively and quantitatively the presence and absence of elements, as well as their ratio, by analysis of the number of electrons at energy levels related to core level transitions representative of specific materials. Such compositional analysis may be used in real time to control the deposition growth process.
REFERENCES:
patent: 3612859 (1971-10-01), Schumacher
patent: 4393311 (1983-07-01), Feldman et al.
patent: 4812650 (1989-03-01), Eckstein et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 4931132 (1990-06-01), Aspnes et al.
Ahn et al., "Reflection Electron Energy Loss Spectroscopy During Initial Stages of GE Heteroepitaxy on SI(001) by Molecular Beam Epitaxy", Abstract submitted to Materials Research Society for 1990 Fall Meeting, Jun. 1990 (1 page).
Atwater et al., "Reflection Electron Energy Loss Spectroscopy during Initial Stages of GE Growth on SI by Molecular Beam Epitaxy", Submitted Jul. 1990 for publication in Appl. Phys. Lett. 58 (3), 21 Jan. 1991, (9 pages+4 pages of Figures).
Ahn et al., "Electron Energy Loss Spectrometry of Surfaces and Interfaces", Abstract submitted Jun. 1990 for presentation at The American Ceramic Society, Inc. 43rd Pacific Coast Regional Meeting Oct. 25-27, 1990, (p. 11).
Ahn, Channing, "Electron Energy Loss Spectrometry of Surfaces During MBE Growth", Abstract submitted Jun. 1990 for presentation at Exxon Research and Engineering Company in Annandale, N.J. in Dec. 1990, (1 page).
Ahn et al., "Reflection Electron Energy Loss Spectroscopy During Initial Stages of GE Heteroepitaxy on SI (001) by Molecular Beam Epitaxy", view graphs presented at 1990 Fall Meeting of Materials Research Society, Nov. 1990 (3 pages).
Ahn et al., "Surface Analysis During the Growth of GE and GE.sub.x SI.sub.1-x Alloys on SI by Reflection Electron Energy Loss Spectrometry", Submitted Jan. 1991 for publication in 1991 in Material Research Society Symposium Proceedings (Advances in Surface and Thin Film Defraction), (10 pages).
Ahn Channing C.
Atwater Harry A.
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