In-situ cleaning of plasma treatment chamber

Details In-situ cleaning of plasma treatment chamber In-situ cleaning of plasma treatment chamber

1994-07-22

1997-04-15

Breneman, R. Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 67, 216 79, C09K 1308

Patent

active

056205260

ABSTRACT:
A cleaning of a plasma chamber is done by a NF.sub.3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF.sub.3 plasma treatments, a low pressure (lower than 10.sup.-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.

REFERENCES:
patent: 4811684 (1989-03-01), Tashiro et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5207836 (1993-05-01), Chang
patent: 5211796 (1993-05-01), Hansen
patent: 5286297 (1994-02-01), Moslehi et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5356478 (1994-10-01), Chen et al.

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