In-situ cleaned ohmic contacts

Details In-situ cleaned ohmic contacts In-situ cleaned ohmic contacts

1985-06-24

1986-08-12

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156646, 204192EC, 204192R, 427 69, C23C 1500

Patent

active

046054790

ABSTRACT:
A process of forming improved ohmic contacts is disclosed. Substrates having contact openings formed in a dielectric layer thereon are cleaned under vacuum with HF/H.sub.2 O vapor wherein the temperature of the vapor is at least about 5.degree. C. lower than that of the substrate. The cleaned substrates are then metallized in-situ in a closed system, e.g. by magnetron sputtering, thus preventing air from contacting the substrate. The cleaning and metallization each require about one minute, thus making the process suitable for efficient, large-scale operation.

REFERENCES:
patent: 1980021 (1934-11-01), Wetherbee
patent: 2324087 (1943-07-01), Jelley
Hoefler, Microelectronics News, Sep. 29, 1984.
Holmes et al., Microelectronics and Reliability, vol. 5, pp. 337-341 1966.
Ibbotson et al., J. Appl. Phys., vol. 56, No. 10, pp. 2939-2942, 1984 (Ibbotson et al. I).
Ibbotson et al., Appl. Phys. Lett. vol. 44, No. 12, pp. 1129-1131, 1984, (Ibbotson et al. II).

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